Performance of 30 nm Gate Length InAlAs-InGaAs MODFETs: Comparison of Conventional and Asymmetric Coupled-Well Transport Channel Configurations

This paper presents simulation results highlighting the effects of variations in the transverse potential profile of the transport channel, on the electrical characteristics of Modulation Doped Field-Effect Transistors (MODFETs). In particular, the I-V and f_T-V_g characteristics of 30 nm gate length InAlAs-InGaAs MODFETs, having conventional quantum well channels, are in good agreement with our simulations. The simulation further predicts improvement in performance when asymmeteric coupled quantum wells are used as the electron transport channels. Energy bands, 2-D electron distributions, and various I-V characteristics are compared for conventional quantum well and asymmeteric coupled quantum well channels. Both quantum well and quantum wire configurations are enhanced by the incorporation of asymmetric coupled quantum well channel.