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Reflectivity kinetics in the vicinity of exciton transitions in semiconductor nanostructures |
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| Authors: | N N Rubtsova O V Buganov A A Kovalyov M A Putyato V V Preobrazhenskii O P Pchelyakov S A Tikhomirov T S Shamirzaev |
| Institution: | (1) Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia;(2) Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk, 220072, Belarus |
| Abstract: | The kinetics of the reflectivity of semiconductor samples with multiple GaAs/AlGaAs quantum wells has been investigated by the pump-probe method with a resolution of 150 fs. Excitons of the E1HH1 and E1LH1 types manifest themselves in the kinetics of transient reflectivity spectra despite the high density of the photogenerated two-dimensional electron gas. Differences are revealed in the shape and kinetics of the transient reflectivity spectra of samples with different detuning of exciton transitions from the pump frequency. |
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