Self-aligned index-guided multiple quantum well laser by sulphur diffusion-induced disordering |
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Authors: | Shieh C Mantz J Engelmann R Alaui K |
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Institution: | Siemens Corp. Res. Inc., Princeton, NJ, USA; |
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Abstract: | A simple self-aligned fabrication process for sulphur-diffusion disordered AlGaAs/GaAs multiple quantum well (MQW) lasers is described that produces refractive index guiding. However, the gradual profile of sulphur diffusion causes a separation between the disordered/nondisordered interface and the pn junction which leads to a large lateral optical loss of the index-guided mode.<> |
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