Temperature and pressure dependences of Zn-doped GaN |
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| Authors: | J. I. Pankove F. C. Prince N. B. Patel |
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| Affiliation: | (1) RCA Laboratories, 08540 Princeton, NJ, USA;(2) Instituto de Física, Unicamp, Campinas, SP, Brasil |
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| Abstract: | The electroluminescence spectrum of Zn-doped GaN is independent of uniaxial pressure up to kbars and of temperature in the range 100–300 K. This work was done during a one month visit by Dr. Pankove at UNICAMP, made possible through a grant from PNUD. Financial support from TELEBRAS and FAPESP is also acknowledged. |
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| Keywords: | 78.20 42.80 |
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