Phase behaviour of n-hexane/perfluoro-n-hexane binary thin wetting films |
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Authors: | W.?Prange,W.?Press,M.?Tolan,C.?Gutt author-information" > author-information__contact u-icon-before" > mailto:gutt@physik.uni-dortmund.de" title=" gutt@physik.uni-dortmund.de" itemprop=" email" data-track=" click" data-track-action=" Email author" data-track-label=" " >Email author |
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Affiliation: | (1) Institut für Experimentelle und Angewandte Physik, Christian-Albrechts-Universität zu Kiel, Leibnizstraße 17-19, D-24098 Kiel, Germany;(2) Institut Laue-Langevin, 6, rue Jules Horowitz, F-38042 Grenoble Cedex, France;(3) Fachbereich Physik, Universität Dortmund, Otto-Hahn-Straße 4, D-44221 Dortmund, Germany |
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Abstract: | We present X-ray reflectivity investigations of the concentration distribution in binary liquid thin films on silicon substrates. The liquid-vapor coexistence of the binary mixture investigated, hexane and perfluorohexane, is far from criticality. Therefore, a sharp interface separates the liquid film from the vapor. The data reveal a separation of the film in layers parallel to the substrate. A phase diagram is constructed as a projection to the (composition difference, temperature) space, covering a temperature range corresponding to the one-phase and the two-phase regime of the bulk liquid. Although the composition data indicate a mixing gap similar to that of the bulk system, there are two major differences: i) only the near-surface phase changes its composition significantly, and ii) a composition gradient in the film exists also at higher temperatures where in the bulk system the one-phase regime exists.Received: 28 April 2004, Published online: 21 September 2004PACS: 61.10.Kw X-ray reflectometry (surfaces, interfaces, films) - 64.75. + g Solubility, segregation, and mixing; phase separation - 68.15. + e Liquid thin films |
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