Unique edge structure and stability of fabricated dimer islands on Si(001) |
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| Authors: | Feng Liu C. T. Salling M. G. Lagally |
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| Affiliation: | University of Wisconsin, Madison, WI 53706, USA |
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| Abstract: | The edge structure and stability of monolayer-high islands fabricated on Si(001) surfaces by scanning tunneling microscopy have been analyzed theoretically. In contrast to the edges of similar islands grown by depositing Si, the properties of edges of fabricated islands are determined by the length of the trench of dimers that are removed to create the island. We demonstrate the possibility of controlling the edge structure, and thus the stability, through a selective process of atom removal. |
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| Keywords: | Computer simulations Silicon Surface defects Surface structure Surface thermodynamics |
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