Effects of the passivation layer deposition temperature on the electrical and optical properties of GaN-based light-emitting diodes |
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Authors: | Guangdi Shen Xia Guo Yanxu Zhu Nanhui Niu |
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Affiliation: | Institute of Electronic Information and Control Engineering, Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China |
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Abstract: | In this paper, silicon oxynitride is deposited through plasma-enhanced chemical vapor deposition (PECVD) to serve as an antireflection passivation layer. We have studied the effects of the deposition temperature (from 100 to 300 °C) on the electrical and optical performances of GaN-LEDs. It is found that the light output of GaN-LEDs improves greatly after the deposition of SiON antireflection passivation layer at 200 °C and is better than that of GaN-LEDs whose layers are deposited at 100 and 300 °C. The electrical properties of GaN-LED do not degrade at 100 and 200 °C, but degrade significantly at 300 °C. |
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Keywords: | Temperature PECVD Passivation layer GaN-LEDs |
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