|
|||||
|
|
Coevaporation phosphorus doping in Si grown by molecular beam epitaxy |
|
| Authors: | R A A Kubiak G Patel W Y Leong R Houghton E H C Parker |
| Institution: | (1) Solid State MBE Research Group, Sir John Cass Faculty of Physical Sciences and Technology, City of London Polytechnic, 31 Jewry Street, EC3N 2EY London, UK;(2) Present address: The Birches Industrial Estate, VG Semicon Ltd., Imberhorne Lane, RH19 1XZ East Grinstead, Sussex, UK |
| Abstract: | Phosphorus-doped Si epilayers with bulk-like mobilities were grown by molecular beam epitaxy (Si-MBE) by coevaporation of phosphorus from a tin phosphide source. The behaviour of P doping as a function of growth parameters and of  potential enhanced doping indicates a non-unity, almost growth-temperature independent incorporation efficiency with negligible surface segregation -a unique combination among coevaporated dopants in Si-MBE. |
| Keywords: | 73 60 Fw 81 15Ef 68 55+b |
| 本文献已被 SpringerLink 等数据库收录！ | |