WSI Polycide工艺的研究

文章基于0.5μm CMOS工艺,研究了造成Polycide工艺中WSI剥落、色斑等异常现象的原因。同时,研究了WSI淀积前清洗、退火温度及Cap Layer层对WSI薄膜翘曲度及应力的影响,并通过实验优化,以大量的数据为依据,对影响WSI薄膜特性的工艺参数进行调试和论证,主要考察更改各条件对圆片翘曲度及应力的变化,并通过显微镜镜检圆片表面,获得了0.5μm Polycide工艺较优的工艺条件。实验结果表明,在WSI淀积后增加Cap Layer层工艺对Polycide工艺工期WSI剥落、色斑等异常有较好的改善作用,且圆片表面形貌能达到MOS器件的工艺制造要求。

Study on WSI Polycide Process

In this paper,the reason of WSI peeling and splash in the polycide technics was investigated basing on the 0.5μm CMOS process technics.And the effect on the WSI films＇ warpage and stress,such as cleaning condition before WSI deposition,the temperature of annealing and the cap layer was studied.Meanwhile,the process deposition parameters of WSI film were studied based on the amount experimental data.By changing the conditions of the wafer warpage and stress,checking the surface of the wafer with the help of microscope,the optimum condition of 0.5μm Polycide deposition was obtained.The results show that adding the cap layer after WSI deposition will help to decrease the occurrence of WSI films peeling and splash in the later period of polycide process,and the morphology of the wafer surface can achieve the MOS device manufacturing requirements.