Photoluminescence of InP:Zn

Photoluminescence spectra of diffusion layers of zinc-doped indium phosphide were investigated. A study was made of diffusion layers obtained in different regimes. A diffusion process was conducted for 30 and 60 min at temperatures of 450–500°C. The photoluminescence spectra consisted of bands with E₁=1.145 eV, E₂=1.37 eV, E₃=1.345 eV, E₄=1.15 eV. Photoluminescence was measured at 77 K upon excitation by laser radiation at 0.44 μm. An analysis is made of the regularities of the change in the spectral dependences for samples with different prehistories by using layer-by-layer etching as well as of the change in the integral Zn activation energy for different temperatures of postdiffusion annealing. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 1, pp. 125–128, January–February, 1997.