Off-stoichiometry effects on BiFeO3 thin films |
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| Authors: | A. Lahmar K. ZhaoS. Habouti M. DietzeC.-H. Solterbeck M. Es-Souni |
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| Affiliation: | a Institute for Materials & Surface Technology, University of Applied Sciences, Kiel, Germanyb Laboratoire d'Elaboration, Analyse Chimique et Ingénierie des Matériaux (LEACIM), Université de La Rochelle, avenue Michel Crépeau, 17042 La Rochelle Cedex 01, France |
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| Abstract: | The effects of Bi and Fe-excess on the structure, ferroelectric, leakage current and magnetic properties of BiFeO3 (BFO) thin films are reported. BFO with 5% excess exhibits no change in the structure with an improvement in leakage current properties in comparison to stoichiometric BFO. Raman spectroscopy of 10% Bi excess suggests a structural change from monoclinic to rhombohedral accompanied with an improvement of resistivity and ferroelectric polarization switching. A higher Fe-excess leads to the formation of pyrochlore Bi2Fe4O9 and gamma-Fe2O3 that cause an increase in conductivity at the macroscopic scale. The results are discussed in terms of Fe and Bi-excess effects on the defect structure of BFO. |
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| Keywords: | Bismuth ferrite Phase diagram Defect structure Ferroelectric properties Magnetic properties |
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