一种锑注入剂量的监测方法

随着近年来液晶面板的兴起以及越来越大的尺寸，高压LCD驱动日渐受到市场的关注。该产品生产中采用了埋层注入和外延工艺，作为N型搀杂的锑注入其工艺稳定性直接影响了外延层的位错／层错缺陷。原先的锑注入监测工艺周期时间长成本高，为了寻求一种更适用于量产的监测方法，文章对锑工艺区别于其他N型注入工艺监测的原因做了进一步分析，提出了一种改进的监测方法，通过低温快速热退火实现了短周期，剂量敏感且具有良好重复性，易于量产。

One Dose Monitoring Method in Antimony Implantation

With more application field of large size LCD panel in recent years, high voltage LCD driver is focused on, which may need buried layer implantation and EPI process. The old monitoring method in antimony implanting need long period and high cost. In order to find a new process monitor method that fit to mass production, cause analysis is given based on the difference between antimony and other N type dopant process monitoring in this paper. And we advise a improved monitoring method by rapid thermal anneali...