Photoelectrochemical behavior,XPS and Auger of n-In_2S_3

n-In_2S_3 has been prepared by CVT method.The photoelectrochemical behavior of n-In_2S_3 in a polysulfide redox solution was investigated.It was found that photoetching remarkablyincreased the fill factor.The maximum quantum efficiency of carrier collection reached 95% after 12hirradiation at 100 mW/cm~2 at an applied potential of+1.2V.XPS and Auger analysis were carriedout for examining surface and bulk concentration.The photoetching effect could be satisfactorilyexplained.

Photoelectrochemical behavior,XPS and Auger of n-In2S3

n-In₂S₃ has been prepared by CVT method. The photoelectrochemical behavior of n-In₂S₃ in a polysulfide redox solution was investigated. It was found that photoetching remarkably increased the fill factor. The maximum quantum efficiency of carrier collection reached 95% after 12h irradiation at 100 mW/cm² at an applied potential of + 1.2 V. XPS and Auger analysis were carried out for examining surface and bulk concentration. The photoetching effect could be satisfactorily explained.