| Photoelectrochemical behavior,XPS and Auger of n-In_2S_3 |
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| 基金项目： | the National Natural Science Foundation of China. |
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| 摘 要： | n-In_2S_3 has been prepared by CVT method.The photoelectrochemical behavior of n-In_2S_3 in a polysulfide redox solution was investigated.It was found that photoetching remarkablyincreased the fill factor.The maximum quantum efficiency of carrier collection reached 95% after 12hirradiation at 100 mW/cm~2 at an applied potential of+1.2V.XPS and Auger analysis were carriedout for examining surface and bulk concentration.The photoetching effect could be satisfactorilyexplained.
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Photoelectrochemical behavior,XPS and Auger of n-In2S3 |
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| Authors: | Sun-Quan Gong Zheng Tan |
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| Abstract: | n-In2S3 has been prepared by CVT method. The photoelectrochemical behavior of n-In2S3 in a polysulfide redox solution was investigated. It was found that photoetching remarkably increased the fill factor. The maximum quantum efficiency of carrier collection reached 95% after 12h irradiation at 100 mW/cm2 at an applied potential of + 1.2 V. XPS and Auger analysis were carried out for examining surface and bulk concentration. The photoetching effect could be satisfactorily explained. |
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