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Structural characterization of Si1 − x Gex ultrathin quantum wells in a Si matrix by high-resolution X-ray diffraction |
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| Authors: | A. M. Afanas’ev M. A. Chuev R. M. Imamov É. Kh. Mukhamedzhanov M. M. Rzaev F. Schäffler M. Müehlberger |
| Affiliation: | 1. Institute of Physics and Technology, Russian Academy of Sciences, Nakhimovskii pr. 36, Moscow, 117218, Russia 2. Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow, 119333, Russia 3. Lebedev Institute of Physics, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 117024, Russia 4. Institut für Halbleiter-und Festk?rperphysik, Johannes-Kepler-Universit?t, A-4040, Linz, Austria |
| Abstract: | The structural characteristics of silicon samples containing one and two Si1 ? x Gex/Si quantum wells 1.8 to 15 nm thick were determined by high-resolution X-ray diffraction. A detailed analysis of X-ray rocking curves made it possible to reproduce the Ge-concentration profiles in the quantum wells. The diffusion of germanium (up to 20%) into interface layers was observed, with a consequent broadening of the quantum well interfaces. |
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