首页 | 本学科首页   官方微博 | 高级检索  
     检索      

聚噻吩制备条件对其结构和导电性能的影响
引用本文:王红敏,唐国强,晋圣松,边成香,韩菲菲,梁旦,徐学诚.聚噻吩制备条件对其结构和导电性能的影响[J].化学学报,2007,65(21):2454-2458.
作者姓名:王红敏  唐国强  晋圣松  边成香  韩菲菲  梁旦  徐学诚
作者单位:华东师范大学纳米功能材料与器件研究中心,上海,200002;华东师范大学纳米功能材料与器件研究中心,上海,200002;华东师范大学纳米功能材料与器件研究中心,上海,200002;华东师范大学纳米功能材料与器件研究中心,上海,200002;华东师范大学纳米功能材料与器件研究中心,上海,200002;华东师范大学纳米功能材料与器件研究中心,上海,200002;华东师范大学纳米功能材料与器件研究中心,上海,200002
摘    要:通过改变聚噻吩合成条件(温度、浓度、反应时间)得到各种不同样品, 用FESEM, FTIR光谱, Raman光谱, XRD, UV-Vis光谱和TG等手段对样品进行研究. 结果表明, 不同的制备条件会影响噻吩环的连接方式, 直接影响聚噻吩结构的分布. 导电性能研究表明, 聚噻吩的结构差异和其导电性能直接相关, 实验证明以α-α相连接的聚噻吩有更高的电导率.

关 键 词:聚噻吩  α-α连接  导电性能  结构
收稿时间:2007-3-8
修稿时间:2007-03-08

Effect of the Preparation Condition on the Structure and Conductive Properties of Polythiophene
WANG Hong-Min,TANG Guo-Qiang,JIN Sheng-Song,BIAN Cheng-Xiang,HAN Fei-Fei,LIANG Dan,XU Xue-Cheng.Effect of the Preparation Condition on the Structure and Conductive Properties of Polythiophene[J].Acta Chimica Sinica,2007,65(21):2454-2458.
Authors:WANG Hong-Min  TANG Guo-Qiang  JIN Sheng-Song  BIAN Cheng-Xiang  HAN Fei-Fei  LIANG Dan  XU Xue-Cheng
Institution:(Center of Functional Nanomaterials and Devices, East China Normal University, Shanghai 200062)
Abstract:Several different polythiophenes have been synthesized by direct oxidative polymerization of thiophene monomers under different conditions such as temperature, concentration, and time of the reaction. The chemical structure of each polymer has been characterized by FESEM, FTIR, Raman, XRD, UV-Vis, and TG respectively. The studies indicated that the connection of the thiophene ring depends on the reactive conditions, which can induce varying structure distribution of polythiophene. Experimental results suggest that some certain relations do exist between the chemical structure and material conductivity, and α-α polythiophene has a higher conductivity.
Keywords:polythiophene  α-α connection  conductivity  structure
本文献已被 CNKI 维普 万方数据 等数据库收录!
点击此处可从《化学学报》浏览原始摘要信息
点击此处可从《化学学报》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号