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VDMOS器件损伤的DC/DC转换器辐射预兆单元设计
引用本文:曹鹏辉,杜磊,包军林,张婧婧,陈晓东,阎家铭.VDMOS器件损伤的DC/DC转换器辐射预兆单元设计[J].电子科技,2009,22(9):4-7.
作者姓名:曹鹏辉  杜磊  包军林  张婧婧  陈晓东  阎家铭
作者单位:1. 西安电子科技大学,技术物理学院,陕西,西安,710071
2. 西安电子科技大学,微电子学院,陕西,西安,710071
基金项目:国家部委"十一五"预研基金资助项目 
摘    要:文中应用预警和健全管理(PHM)方法,在深入研究了辐射导致VDMOS器件和DC/DC转换器性能退化之间关系的基础上,设计了基于VDMOS器件损伤的DC/DC转换器辐射预兆单元.经过仿真证实了所设计的预兆单元可以提前报警.

关 键 词:辐射  DC/DC转换器  VDMOS器件  预兆单元

Design of the Radiation Damage Prognostic Cell for DC/DC Converters Based On VDMOS Transistors Radiation Damage
Cao Penghui,Du Lei,Bao Junlin,Zhang Jingjing,Chen Xiaodong,Yan Jiaming.Design of the Radiation Damage Prognostic Cell for DC/DC Converters Based On VDMOS Transistors Radiation Damage[J].Electronic Science and Technology,2009,22(9):4-7.
Authors:Cao Penghui  Du Lei  Bao Junlin  Zhang Jingjing  Chen Xiaodong  Yan Jiaming
Institution:SCao Penghui1,Du Lei1,Bao Junlin2,Zhang Jingjing1,Chen Xiaodong1,Yan Jiaming1(1.School of Technical Physics,Xidian University,Xi'an 710071,China,2.School of Microelectronics,China)
Abstract:The method of alarm and PHM(Prognostics/Health Management) is introduced.The radiation damage relation between VDMOS transistors and DC/DC converters is investigated.According to this relation,a prognostic cell of DC/DC converter based on VDMOS transistors is designed.Simulation shows that the prognostic cell can alarm before DC/DC converters fail.
Keywords:radiation DC/DC converters  VDMOS transistors  prognostic cell  
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