铝热反应法制备双股类螺旋Zn2SnO4单晶纳米带

This paper reports the preparation in large quantity of bifilar helix-like nanobelts of single crystal ine Zn2SnO4, a face-centered cubic spinel and transparent semiconductor that possesses wide applications in photovoltaic devices and sensors for humidity and combustible gases, by using a unique approach that combines chemical vapor deposition, aluminothermal reaction, vapor-liquid-solid growth, mergence of polar planes, and kinetic control by steady-state turbulent flow. The bifilar helix-like nanobelt was formed by the twisting and merging of two independent Zn2SnO4 nanobelts, as analyzed by scanning electron microscopy, transmission electron microscopy, electron diffraction, X-ray diffraction, Raman spectroscopy, and photoluminescence. It had a periodicity along the axial direction and hence, is actual y a super-lattice material. The photoluminescence measurements showed a strong light emission at 326.1 nm from the as-prepared sample with a line width of about 1.5 nm. The combined approach used in this study, in particular its aluminothermal reaction and steady-state turbulent gas flow perturbation steps, may be helpful in preparing other similar materials.