| AlN/GaN分布布拉格反射器反射率的研究 |
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| 引用本文： | 洪灵愿,刘宝林.AlN/GaN分布布拉格反射器反射率的研究[J].集美大学学报(自然科学版),2005,10(2):164-168. |
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| 作者姓名： | 洪灵愿 刘宝林 |
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| 作者单位： | 厦门大学物理与机电工程学院,福建,厦门,361005;厦门大学物理与机电工程学院,福建,厦门,361005 |
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| 基金项目： | 福建省自然科学基金项目(A0210006) |
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| 摘 要： | 从理论上推导出分布布拉格反射器(DBR)反射率的计算公式，分析了GaN基材料DBR反射率与单层膜折射率、多层膜的对数、单层膜的厚度等的关系，发现20对AlN／GaN构成的1／4波长。DBR的反射率在中心波长410nm下达到了0．9995，分析了DBR反射率随单层厚度波动的影响，并发现随着正偏差的增大，最大反射率对应的波长增大．相同对数AlN／GaN多层膜的反射率比MGaN／GaN多层膜的反射率大，因此，AlN／GaN比AlGaN／GaN更适合做反射器。
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| 关 键 词： | 分布布拉格反射器(DBR) 反射率 GaN AlN AlGaN |
| 文章编号： | 1007-7405(2005)02-0164-05 |
| 修稿时间： | 2004年10月14 |
Study on the Reflectivity of Distributed Bragg Reflector |
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| HONG Ling-yuan,LIU Bao-lin.Study on the Reflectivity of Distributed Bragg Reflector[J].the Editorial Board of Jimei University(Natural Science),2005,10(2):164-168. |
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| Authors: | HONG Ling-yuan LIU Bao-lin |
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| Abstract: | The analytic expression of the reflectivity of d istributed Bragg reflector (DBR ) is deduced, and the relation between the reflectivity ofDBR and the refractive index of single layer, numbers of the peri- ods ofmulti-layer and the thickness of single layer is analyzed. When the incident light is 410 nanometer, the reflectivity of 20 periods of quarter-wave A lN /GaN DBR is attained to 0.999 5. Dependence of the reflectivity of a DBR on the thickness of single layer is d iscussed in detail. It is found that the wavelength atmaximum reflectivity increases with the positive warp of the thickness of single layer, and the reflectivity of a A lN /GaN DBR is larger than that of a A lGaN /GaN DBR with the same structural parameters. So, A lN /GaN is more compatible material for DBR than A lGaN /GaN. |
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| Keywords: | distributed Bragg reflector reflectivity GaN AlN AlGaN |
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