| 基于氧化锌纳米线的紫外发光二极管 |
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| 引用本文： | 孙晖,张琦锋,吴锦雷. 基于氧化锌纳米线的紫外发光二极管[J]. 物理学报, 2007, 56(6): 3479-3482 |
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| 作者姓名： | 孙晖 张琦锋 吴锦雷 |
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| 作者单位： | 北京大学电子学系，北京 100871 |
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| 基金项目： | 国家重点基础研究发展计划(973计划);国家自然科学基金 |
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| 摘 要： | 构建了基于n-ZnO纳米线/p-Si异质结的紫外发光二极管.ZnO纳米线准阵列采用水热法生长于重掺p型Si片上.此法简易，反应温度低，易于大规模生产；其产物ZnO纳米线结晶良好，以c轴为优势取向，光激发下的紫外荧光发射很强.二极管的电学接触采用聚合物填充的In阴极或以氧化铟锡(ITO)玻璃紧压形成阴极.它们的I-V特性体现出良好的二极管性质.在正向偏置电压驱动下，构建的发光二极管可稳定发射波长在387nm的较强的近紫外光和较弱的绿光.关键词：ZnO纳米线异质结电致发光水热法
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| 关 键 词： | ZnO纳米线 异质结 电致发光 水热法 |
| 文章编号： | 1000-3290/2007/56(06)/3479-04 |
| 收稿时间： | 2006-11-09 |
| 修稿时间： | 2006-11-09 |
Ultraviolet light emitting diode based on ZnO nanowires |
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| Sun Hui,Zhang Qi-Feng,Wu Jin-Lei. Ultraviolet light emitting diode based on ZnO nanowires[J]. Acta Physica Sinica, 2007, 56(6): 3479-3482 |
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| Authors: | Sun Hui Zhang Qi-Feng Wu Jin-Lei |
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| Affiliation: | Department of Electronics, Peking University, Beijing 100871, China |
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| Abstract: | The ultraviolet light emitting diode based on n-ZnO-nanowire/p-Si heterojunction was fabricated. Quasi-arrays of ZnO nanowires were grown on p-Si substrates using a simple low-temperature hydrothermal method that would be easily extended to mass production. As-grown ZnO nanowires showed good crystallinity, a preferable c axial orientation, and strong ultraviolet emission under optical excitation. Different kinds of cathodes were made to form the electrical contact. The I-V characteristics were diode-like. Under forward bias, the heterojunction diode emitted strong ultraviolet light at 387-nm and weaker green light. |
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| Keywords: | ZnO nanowires heterojunction electroluminescence hydrothermal method |
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