High-power and long-lifetime inGaN blue- violet laser diodes grown by molecular beam epitaxy |
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| Authors: | Tan WS Kauer M Hooper SE Barnes JM Rossetti M Smeeton TM Bousquet V Heffernan J |
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| Institution: | Sharp Labs. of Eur. Ltd., Oxford; |
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| Abstract: | InGaN 405 nm multiple quantum well laser diodes grown by molecular beam epitaxy (MBE) with a continuous-wave (CW) lifetime of up to 42 h are reported. The CW threshold current density of the ridge waveguide laser diodes is 3.6 kA/cm2 and the slope efficiency for uncoated facets is 0.42 W/A per facet with a maximum CW output power of 45 mW per facet. Statistical variation of CW lifetime with dissipated power is presented for MBE-grown laser diodes from five different wafers. |
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