适合器件设计和电路模拟的SiGe基区HBT物理模型

提出了一个模拟ＳｉＧｅ基区ＨＢＴ器件特性的物理模型。在基区部分考虑了发射结处的价带不连续、大注入效应、Ｇｅ组份变化及重掺杂效应引起的能带变化的影响；在集电区分析时考虑了基区推出效应、载流子速度饱和效应、电流引起的空间电荷区效应以及准饱和效应。在此基础上给出了ＳｉＧｅ基区ＨＢＴ器件的电流和电荷公式。同时开发了ＳｉＧｅ基区ＨＢＴ的直流瞬态模型和小信号模型。利用修改的ＳＰＩＣＥ程序模拟了实际ＳｉＧｅ基区

A Physical Model for Simulation of SiGe Base HBT's

A physical model for simulation of SiGe base HBT's is presented. The model allows for valeance band discontinuity . heavy doping effects , high current effects , and the built-in field due to Ge concentration gradient in the base. In the epitaxial collector , the effects of velocity satu- ration , current-induced space-charge region and quasi-saturation are taken into consideration. A DC transient model and AC model for SiGe base HBT's are also developed. Actual SiGe HBT de- vices and circuits are simulated using this physical model and modified SPICE3A7. The credibility and accuracy of the model has been demonstrated by comparison of the simulation with experimen- tal results.