Determination of antimony depth profiles in semiconductor silicon by chemical etching and nondispersive atomic fluorescence spectrometry with hydride generation

After the silicon has been anodized, the silica film formed is removed by dilute hydrofluoric acid, and the antimony in the etching solution determined by nondispersive atomic fluorescence spectrometry. The amount of silicon removed is measured in the etching solution by inductively-coupled plasma atomic emission spectrometry. Down to 10¹⁸ atoms Sb cm^-3 can be determined at sectioning intervals of 50 nm.