Influence of Mn-Doped Content on Ferromagnetism of Ga1-xMnxN Film Grown by LP-MOVPE |
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Authors: | ZHANG Bin YAO Shu-De WANG Kun DING Zhi-Bo CHEN Zhi-Tao SU Yue-Yong ZHANG Guo-Yi MA Hong-Ji NIE Rui ZHANG Ya-Wei |
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Affiliation: | Department of Technical Physics, School of Physics, Peking University, Beijing 100871Department of Physics, School of Physics, Peking University, Beijing 100871 |
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Abstract: | The diluted magnetic semiconductor Ga1-xMnxN was achieved by low-pressure metal organic vapour-phase epitaxy (LP-MOVPE). Proton-induced x-ray emission was employed non-destructively, quickly and accurately to determine the Mn-doped content. The magnetic property was measured by a superconducting-quantum-interference-device (SQID) magnetometer. Apparent ferromagnetic hysteresis loops measured at or above room temperature are presented. No ferromagnetic secondary phases were detected by high-resolution x-ray diffraction. The experimental results show that the ferromagnetic signal firstly decreases and then increases with the increasing Mn-doped content from 0.23% to 4.69% and it is the weakest when Mn content is 0.51%. The annealing treatment could make the ferromagnetic property stronger. |
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Keywords: | 75.50.Pp 75.70.Ak 32.30.Rj |
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