Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor |
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| Authors: | Jusang Park Han-Bo-Ram Lee Doyoung Kim Jaehong Yoon Clement Lansalot Julien Gatineau Henri Chevrel Hyungjun Kim |
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| Institution: | 1. School of Electrical and Electronic Engineering, Yonsei University, Seoul, 120-749, Korea;2. School of Materials Science and Engineering, Incheon National University, Incheon, Korea;3. School of Electrical and Electronic Engineering, Ulsan College, Ulsan, 680-749, Korea;4. Air Liquide Laboratories, Wadai 28, Tsukuba, Ibaraki Pref., Japan |
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| Abstract: | Cobalt (Co) thermal or plasma enhanced atomic layer deposition (PE-ALD) was investigated using a novel metal organic precursor, Co(MeCp)2, and NH3 or H2 or their plasma as a reactant. The growth characteristics, electrical and microstructural properties were investigated. Especially, PE-ALD produced Co thin films at low growth temperature down to 100 °C. Interestingly, the low temperature growth of Co films showed the formation of columnar structure at substrate temperature below 300 °C. The growth characteristics and films properties of PE-ALD Co using bis(η-methylcyclopentadienyl) Co(II) (Co(MeCp)2) was compared with those of PE-ALD Co using other Cp based metal organic precursors, bis-cyclopentadienyl cobalt (II) (CoCp2) and cyclopentadienyl isopropyl acetamidinato-cobalt (Co(CpAMD)). |
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| Keywords: | PE-ALD Th-ALD cobalt metal thin films metal organic precursors |
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