Optical absorption, disorder and the Anderson transition |
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Authors: | Z. Ovadyahu |
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Affiliation: | The Racah Institute of Physics, The Hebrew University, Jerusalem 91904, Israel |
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Abstract: | The optical gap, Eg, of amorphous indium-oxide films is measured as a function of static disorder near the metal-insulator transition. On the insulating side of the transition the optical gap obeys a scaling relation, ΔEg = -E*Δg where E* is of the order of the Fermi energy of the given sample and g≡KFl. These results are ascribed to the continuous shift of the mobility-edge in the conduction band with disorder. |
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