A model for monolayer deposition with interacting particles |
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| Institution: | 1. Fakultät für Mathematik, Universität Bochum, D-44780 Bochum, Germany;2. Centro Internacional de Ciencias, Cuernavaca, Mexico;3. Centro de Ciencias Fisicas, UNAM Av. Universidad, 62251 Cuernavaca, Mexico;1. Department of Chemistry and Chemical Engineering, Royal Military College of Canada, PO Box 17000, Station Forces Kingston, ON, Canada K7K 7B4;2. Faculty of Energy Systems and Nuclear Science, University of Ontario Institute of Technology, 2000 Simcoe Street N, Oshawa, ON, Canada L1H 7K4;3. Fuel and Fuel Channel Safety Branch, Canadian Nuclear Laboratories, 286 Plant Road, Chalk River, ON, Canada K0J 1J0;1. Nuclear Engineering and Technology Program, Indian Institute of Technology Kanpur, Kanpur 208 016, India;2. DIT University, Dehradun 248 009, India;3. Department of Mechanical Engineering, Indian Institute of Technology Kanpur, Kanpur 208 016, India |
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| Abstract: | We present a very versatile three-dimensional growth model with random initial conditions for the deposition of a monolayer of particles out of a gas beam on a substrate. The flexibility of the model is guaranteed by the inclusion of parameters like the substrate temperature and the chemical binding whose variation changes strongly the lateral diffusion and the morphology of the developing disordered structure. In the modelling of the potential we can use in principle data coming from experiment and quantum mechanical computations. The use of short-range potentials allows to apply the model to covalent systems. We find a variety of patterns which resemble structures found in the experiment and in other theoretical models. The important parameters have simple physical and chemical interpretations, whereas the simulation of static properties may be done with more complicated potentials for specific materials. Our approach allows to look for particular growth conditions and dynamical processes of large structures with moderate use of computational resources. |
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