| Abstract: | A first‐generation dendrimer ( 2 ), containing phenol groups in the exterior for solubilization in aqueous alkaline solutions, was evaluated as a new negative‐working, alkaline‐developable photoresist material. A negative‐working photoresist based on 2 , 4,4′‐methylenebis2,6‐bis(hydroxymethyl)phenol] as a crosslinker, and diphenyliodonium 9,10‐dimethoxyanthracene‐2‐sulfonate as a photoacid generator was demonstrated. This resist gave a clear negative pattern through postbaking at 90 °C after exposure to UV light, which was followed by development with a 2.38% aqueous tetramethyl ammonium hydroxide solution at room temperature. © 2005 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 43: 1210–1215, 2005 |
