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理想第二类超导薄膜的纵场临界电流
引用本文:吴杭生,顾一鸣. 理想第二类超导薄膜的纵场临界电流[J]. 物理学报, 1983, 32(5): 607-617
作者姓名:吴杭生  顾一鸣
作者单位:中国科学技术大学
摘    要:本文分析了一个在纵向磁场He中,载流的理想第二类超导薄膜(ξ(T)《d≤λ(T))的混合态结构。指出,只有当He>(Hc1)(d)时,超导膜的混合态才具有无阻负载电流的能力。本文得到的纵场临界电流曲线具有复杂的结构,并且一般均呈现峰值效应。Heaton及Rose-Innes测得的Nb55Ta45合金的Ic-He曲线和d>5λ时的理论曲线相比较,在主要特征上是相同的。关键词

收稿时间:1982-04-26

THE LONGITUDINAL CRITICAL CURRENT OF A THIN FILM OF TYPE II SUPERCONDUCTORS
WU HANG-SHENG and GU YI-MING. THE LONGITUDINAL CRITICAL CURRENT OF A THIN FILM OF TYPE II SUPERCONDUCTORS[J]. Acta Physica Sinica, 1983, 32(5): 607-617
Authors:WU HANG-SHENG and GU YI-MING
Abstract:The structure of the mixed state of a current-carrying thin film of ideal type II superconductors in longitudinal magnetic field He is analysed. We show that the lossless current flow through the films in the mixed state is possible only if He is larger than Hc1)(d). The curves of longitudinal critical current obtained have complex structure and show peak effect in general. The main feature of the theoretical Ic-He curve of the films with thickness d larger than 5λ is identical with that observed by Heaton and Rose-Innes in Nb55Ta45 alloys.
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