Influence of annealing temperature on structural,electrical and optical properties of WSi2 |
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Authors: | M Amiotti E Bellandi A Borghesi A Piaggi G Guizzetti F Nava G Queirolo |
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Institution: | (1) Dipartimento di Fisica A. Volta, Università di Pavia, I-27100 Pavia, Italy;(2) Dipartimento di Fisica, Università di Modena, I-41100 Modena, Italy;(3) SGS-Thomson, Via C. Olivetti, I-20041 Agrate Brianza (Mi), Italy |
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Abstract: | WSi2 polycrystalline films of different thicknesses were prepared by low pressure chemical vapor deposition on silicon wafers, and their crystallization properties were studied as a function of the annealing temperature. Structural measurements were performed by X-ray diffraction, detailing for the first time the phase transition from the amorphous to the hexagonal structure at an annealing temperature 380° C and from hexagonal to tetragonal above 700° C. The electrical sheet resistance showed the same transition temperatures.Optical characterization was performed by spectroscopic ellipsometry, and the real and imaginary part of the complex refractive index were obtained as a function of the annealing temperature in the 0.25–0.9 m wavelength range. A broad optical band was found for samples annealed up to 700° C, while for higher annealing temperatures a transparency region for wavelengths greater than 0.5 m and some significant structures appear. A corresponding behavior was observed in the infrared reflectance spectra. Furthermore, it was shown that the determination of the thickness of SiO2 grown on WSi2 requires a multilayer model, taking into account the transparency of tetragonal WSi2. |
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Keywords: | 81 40 Tv 81 40 Rs 78 65 Ez |
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