Formation of the polycrystalline FeSi phase with the CsCl structure in codeposited thin Fe x Si1 ? x films ( x = 0.5–0.6) |
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Authors: | A V Zenkevich D E Lauer and V P Filippov |
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Institution: | (1) Moscow Engineering Physics Institute, Kashirskoe sh. 31, Moscow, 115409, Russia |
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Abstract: | Specific features of the phase formation in the Fe-Si system within the Fe
x
Si1 − x
(x = 0.5–0.6) concentration range have been investigated. The data obtained by conversion electron M?ssbauer spectroscopy suggest
that, for the Fe-Si system in the concentration range x > 0.55, a polycrystalline FeSi phase with the CsCl structure is formed under thermodynamically equilibrium conditions upon
annealing at T = 250°C; in this case, the excess (overstoichiometric) Fe atoms are incorporated into the Si sublattice. Previously, the
CsCl-FeSi phase was observed only in epitaxially stabilized FeSi/Si(100) layers.
Original Russian Text ? A.V. Zenkevich, D.E. Lauer, V.P. Filippov, 2007, published in Izvestiya Rossiiskoi Akademii Nauk.
Seriya Fizicheskaya, 2007, Vol. 71, No. 9, pp. 1313–1315. |
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Keywords: | |
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