GaN/AlGaN双带红外探测及光子频率上转换研究

研究了GaN/AlGaN异质结构中的双带（中、远）红外探测及光子频率上转换特性.通过光致发光光谱确认GaN/AlGaN探测器结构中AlGaN本征层的Al组分，讨论了不同Al组分GaN/AlGaN异质结的导带带阶界面功函数差.在拟合单周期GaN/AlGaN探测器中红外和远红外波段响应谱的基础上，研究多周期GaN/AlGaN探测器与GaN/AlGaN发光二极管集成结构的中红外和远红外光子频率上转换效率与GaN发射层厚度、AlGaN本征层厚度、紫光光子出射效率、内量子效率、空间频率和发射层掺杂浓度间的关系，优化 关键词： 双带红外探测 光子频率上转换 响应谱 GaN/AlGaN

GaN/AlGaN dual-band infrared detection and photon frequency upconversion

A detailed investigation on dual-band （mid- and far-） infrared detection and photon frequency upconversion in GaN/AlGaN heterojunction structures is carried out. We deduce the Al composition in intrinsic AlGaN barrier layer through photoluminescence spectroscopy, and evaluate the conduction bandgap interfacial workfunction in GaN/AlGaN with different Al compositions. Based on the mid- and far-infrared responsivity simulation of single-period GaN/AlGaN heterojunction detector, we investigate the mid- and far-infrared photon frequency upconversion efficiencies of multi-period GaN/AlGaN heterojunction detectors integrated with GaN/AlGaN violet light emitting diodes in relation to the GaN emitter layer thickness, intrinsic AlGaN barrier layer thickness, violet photon extraction efficiency, internal quantum efficiency, spatial frequency, and GaN emitter doping concentration. The results show that GaN-based infrared upconversion devices have high upconversion efficiency and good optoelectronic application prospect.