| InGaAs PIN光电探测器的暗电流特性研究 |
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| 引用本文： | 郝国强,张永刚,刘天东,李爱珍.InGaAs PIN光电探测器的暗电流特性研究[J].半导体光电,2004,25(5):341-345. |
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| 作者姓名： | 郝国强 张永刚 刘天东 李爱珍 |
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| 作者单位： | 中国科学院上海微系统与信息技术研究所,信息功能材料国家重点实验室,上海,200050;中国科学院上海微系统与信息技术研究所,信息功能材料国家重点实验室,上海,200050;中国科学院上海微系统与信息技术研究所,信息功能材料国家重点实验室,上海,200050;中国科学院上海微系统与信息技术研究所,信息功能材料国家重点实验室,上海,200050 |
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| 基金项目： | 国家重点基础研究发展计划(973计划) |
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| 摘 要： | 从理论上分析了In0.53Ga0.47As PIN光电探测器在不同掺杂浓度及反向偏压下的暗电流特性,并与研制的器件的实测结果进行了比较和讨论.模拟结果表明:在低偏压下,器件中的产生复合电流起主要作用,偏压增大时,隧道电流起主要作用,且In0.53Ga0.47As光吸收层的载流子浓度对器件的暗电流有很大的影响,实测器件特性与模拟结果完全符合.文中还对器件结面积和电极尺寸等对暗电流的影响进行了比较和分析.
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| 关 键 词： | 光电探测器 暗电流 InGaAs 化合物半导体 |
| 文章编号： | 1001-5868(2004)05-0341-04 |
| 修稿时间： | 2004年1月12日 |
The Dark Current Characteristics of InGaAs PIN Photodetectors |
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| HAO Guo-qiang,ZHANG Yong-gang,LIU Tian-dong,LI Ai-zhenhai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai ,C HN.The Dark Current Characteristics of InGaAs PIN Photodetectors[J].Semiconductor Optoelectronics,2004,25(5):341-345. |
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| Authors: | HAO Guo-qiang ZHANG Yong-gang LIU Tian-dong LI Ai-zhenhai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai C HN |
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| Institution: | HAO Guo-qiang,ZHANG Yong-gang,LIU Tian-dong,LI Ai-zhenhai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,C HN) |
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| Abstract: | The dark current characteristics of In_(0.53)Ga_(0.47)As PIN photodetectors at different doping concentrations and reverse bias voltages have been researched theoretically,and compared with the measured results of our fabricated devices.Results show that the dart currents are dominated by generation-recombination mechanism at lower bias,whereas dominated by tunneling effects at higher bias,and the carrier concentration in the In_(0.53)Ga_(0.47)As absorption layer plays an important role.The simulated results are consistent with the measured ones entirely.The influence of junction area and bonding pad size on the dark current has been also analyzed. |
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| Keywords: | photodetector dark current InGaAs compound semiconductor |
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