Influence of substrate surface chemistry on the performance of top-gate organic thin-film transistors

Organic thin-film transistor (OTFT) performance depends on the chemical characteristics of the interface between functional semiconductor/dielectric/conductor materials. Here we report for the first time that OTFT response in top-gate architectures strongly depends on the substrate chemical functionalization. Depending on the nature of the substrate surface, dramatic variations and opposite trends of the TFT threshold voltage (~±50 V) and OFF current (10(5)×!) are observed for both p- and n-channel semiconductors. However, the field-effect mobility varies only marginally (~2×). Our results demonstrate that the substrate is not a mere passive mechanical support.