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Perpendicular magnetization and exchange bias in epitaxial NiO/[Ni/Pt]2 multilayers
Authors:Lin-Ao Huang  Mei-Yu Wang  Peng Wang  Yuan Yuan  Ruo-Bai Liu  Tian-Yu Liu  Yu Lu  Jia-Rui Chen  Lu-Jun Wei  Wei Zhang  Biao You  Qing-Yu Xu  Jun Du
Affiliation:1.National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;2.College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China;3.School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210046, China;4.School of Physics, Southeast University, Nanjing 211189, China;5.Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
Abstract:The realization of perpendicular magnetization and perpendicular exchange bias (PEB) in magnetic multilayers is important for the spintronic applications. NiO(t)/[Ni(4 nm)/Pt(1 nm)]2 multilayers with varying the NiO layer thickness t have been epitaxially deposited on SrTiO3 (001) substrates. Perpendicular magnetization can be achieved when t < 25 nm. Perpendicular magnetization originates from strong perpendicular magnetic anisotropy (PMA), mainly resulting from interfacial strain induced by the lattice mismatch between the Ni and Pt layers. The PMA energy constant decreases monotonically with increasing t, due to the weakening of Ni (001) orientation and a little degradation of the Ni-Pt interface. Furthermore, significant PEB can be observed though NiO layer has spin compensated (001) crystalline plane. The PEB field increases monotonically with increasing t, which is considered to result from the thickness dependent anisotropy of the NiO layer.
Keywords:perpendicular magnetic anisotropy  perpendicular exchange bias  epitaxial growth  random field model  
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