Scaling the Equivalent Oxide Thickness by Employing a TiO2 Thin Film on a ZrO2–Al2O3‐Based Dielectric for Further Scaling of Dynamic Random Access Memory期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Scaling the Equivalent Oxide Thickness by Employing a TiO2 Thin Film on a ZrO2–Al2O3‐Based Dielectric for Further Scaling of Dynamic Random Access Memory

Authors:	Soon Hyung Cha Cheol Hyun An Seong Tak Cho Dong-Gun Kim Dae Seon Kwon Jun Il Lim Woojin Jeon Cheol Seong Hwang

Abstract:

Keywords:	atomic layer deposition dynamic random access memory capacitors equivalent oxide thickness ZrO2/Al2O3/TiO2 ZrO2/Al2O3/ZrO2