|
|||||
|
|
Time-evolution of thermal oxidation on high-index silicon surfaces: Real-time photoemission spectroscopic study with synchrotron radiation |
|
| Authors: | Shin-ya Ohno Kei Inoue Masahiro Morimoto Sadanori Arae Hiroaki Toyoshima Akitaka Yoshigoe Yuden Teraoka Shoichi Ogata Tetsuji Yasuda Masatoshi Tanaka |
| Institution: | 1. Department of Physics, Faculty of Engineering, Yokohama National University, 79‐5 Tokiwadai, Hodogaya-ku, Yokohama 240‐8501, Japan;2. Quantum Beam Science Directorate, Japan Atomic Energy Research Agency, 1-1-1 Koto, Sayo-cho, Hyogo 679‐5148, Japan;3. National Institute for Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305‐8562, Japan |
| Abstract: | The initial oxidation on high-index silicon surfaces with (113) and (120) orientations at 820 K has been investigated by real-time X-ray photoemission spectroscopy (Si 2p and O 1s) using 687 eV photons. The time evolutions of the Sin+ (n = 1–4) components in the Si 2p spectrum indicate that the Si2 + state is suppressed on high-index surfaces compared with Si(001). The O 1s state consists of two components, a low-binding-energy component (LBC) and a high-binding-energy component (HBC). It is suggested that the O atom in strained Si OSi contributes to the LBC component. The reaction rates are slower on high-index surfaces compared with that on Si(001). |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ | |