磁控溅射制备纳米TiO_2半导体薄膜的工艺研究与光谱分析

通过射频反应磁控溅射在玻璃基片上制备TiO2薄膜。采用X射线衍射仪和Raman光谱仪研究退火温度对薄膜晶体结构的影响;还探讨了磁控溅射氧分压对薄膜性能的影响。结果表明：磁控溅射制备的薄膜在不同温度下退火。300℃退火时薄膜没有结晶;400℃退火出现锐钛矿结构;500℃退火后薄膜锐钛矿结构更完善,（101）方向开始优先生长,是因为锐钛矿结构更完整。随着退火温度的升高晶粒长大拉曼光谱出现红移,拉曼光谱所反应的锐钛矿信息增强,500℃退火时197cm-1出现了Eg振动模式。和标准的单晶TiO2体材料相比,拉曼峰位置都略有红移是纳米量子尺寸效应造成的。氩氧比分别为9∶1、7∶3和6∶4溅射制备的薄膜通过400℃退火后的XRD衍射谱没有明显的区别,但拉曼光谱显示氩氧比为7∶3时结晶要完善些。

Preparation and Spectrum Analysis of TiO_2 Semiconductor Thin Film Prepared by R.F. Magnetron Sputtering

The films were prepared by R.F.magnetron,and annealed at different temperatures.The temperature at which the amorphous structure changes to anatase is between 300℃ and 400℃.When the annealed temperature reaches 500℃,the anatase structure becomes more perfectand more obvious property of（101） preferred orientation.Bathochromic shift was observed in the Raman maps,because of grain growth in higher temperatures.The vibration mode of Eg in 197cm-1 was discovered when annealed at 500℃.There is no obvious structure difference when the films are sputtered at different oxygen partial pressures in the XRD spectra but the Raman map show that the structure behaves a bit better at the pressure ratio of argon and oxygen of 7∶3.