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Effect of the thickness of InGaN interlayer on a-plane GaN epilayer
Authors:Wang Jian-Xia  Wang Lian-Shan  Zhang Qian  Meng Xiang-Yue  Yang Shao-Yan  Zhao Gui-Juan  Li Hui-Jie  Wei Hong-Yuan  Wang Zhan-Guo
Affiliation:a Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;b Patent Examination Cooperation Center of the Patent Office, SIPO, Henan, Zhengzhou 450000, China
Abstract:In this paper,we use the a-plane InGaN interlayer to improve the property of a-plane GaN.Based on the a-InGaN interlayer,a template exhibits that a regular,porous structure,which acts as a compliant effect,can be obtained to release the strain caused by the lattice and thermal mismatch between a-GaN and r-sapphire.We find that the thickness of InGaN has a great influence on the growth of a-GaN.The surface morphology and crystalline quality both are first improved and then deteriorated with increasing the thickness of the InGaN interlayer.When the InGaN thickness exceeds a critical point,the a-GaN epilayer peels off in the process of cooling down to room temperature.This is an attractive way of lifting off a-GaN films from the sapphire substrate.
Keywords:non-polar a-plane GaN  InGaN interlayer  peel-off  metalorganic chemical vapor deposition
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