Synthesis and electrical properties of In2O3(ZnO)m superlattice nanobelt |
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| Authors: | Tang Xin-Yue Gao Hong Wu Li-Li Wen Jing Pan Si-Ming Liu Xin Zhang Xi-Tian |
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| Institution: | a Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China;b Center for Engineering Training and Basic Experimentation, Heilongjiang University of Science and Technology, Harbin 150022, China |
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| Abstract: | One-dimensional(ID) In_2O_3(ZnO)_m superlattice nanobelts are synthesized by a chemical vapor deposition method.The formation of the In_2O_3(ZnO)_m superlattice is verified by the high-resolution transmission electron microscopy images.The typical zigzag boundaries could be clearly observed.An additional peak at 614 cm~(-1) is found in the Raman spectrum,which may correspond to the superlattice structure.The study about the electrical transport properties reveals that the In_2O_3(ZnO)_m nanobelts exhibit peculiar nonlinear I-V characteristics even under the Ohmic contact measurement condition,which are different from the Ohmic behaviors of the In-doped ZnO nanobelts.The photoelectrical measurements show the differences in the photocurrent property between them,and their transport mechanisms are also discussed. |
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| Keywords: | In2O3(ZnO)m superlattice electrical properties |
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