| 高频区具有大带隙的二维像素型光子晶体结构 |
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| 引用本文： | 冯尚申,沈林放,何赛灵,肖三水.高频区具有大带隙的二维像素型光子晶体结构[J].光学学报,2003,23(9):025-1029. |
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| 作者姓名： | 冯尚申 沈林放 何赛灵 肖三水 |
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| 作者单位： | 1. 浙江大学现代光学仪器国家重点实验室光及电磁波研究中心,杭州,310027;浙江台州学院物理系,浙江省临海,317000
2. 浙江大学现代光学仪器国家重点实验室光及电磁波研究中心,杭州,310027 |
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| 基金项目： | 国家自然科学基金 (90 10 10 2 4 )，浙江省自然科学基金(ZD0 0 0 2 )重点资助课题 |
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| 摘 要： | 针对方块像素组成的二维光子晶体，传统平面波展开法可经修正使之收敛速度大大提高。采用快速算法，在高频区域找到了一种具有稳定的较大绝对禁带宽度的GaAs光子晶体结构，绝对禁带宽度为0．0995ωc(ωc-2π／α，α为晶格常量，c为光速)，中心频率为1．2625ω。
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| 关 键 词： | 光子晶体 禁带宽度 快速平面波展开法 像素型 晶体结构 砷化钙 中心频率 布洛赫定理 |
| 收稿时间： | 2002/7/12 |
A Two-Dimensional Pixel-Type of Photonic Crystal Structure with a Large Complete Band Gap at High Frequency |
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| Feng Shangshen , Shen Lingfang He Sailing Xiao Sanshui State Key Laboratory of Modern Optical Instrumentation,Center for Optical and Electromagnetic Research,Zhejiang University,Hangzhou.A Two-Dimensional Pixel-Type of Photonic Crystal Structure with a Large Complete Band Gap at High Frequency[J].Acta Optica Sinica,2003,23(9):025-1029. |
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| Authors: | Feng Shangshen Shen Lingfang He Sailing Xiao Sanshui State Key Laboratory of Modern Optical Instrumentation Center for Optical and Electromagnetic Research Zhejiang University Hangzhou |
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| Institution: | Feng Shangshen 1,2 Shen Lingfang 1 He Sailing 1 Xiao Sanshui 1 1 State Key Laboratory of Modern Optical Instrumentation,Center for Optical and Electromagnetic Research,Zhejiang University,Hangzhou 310027 2 Department of Physics,Taizhou College,Linhai,Zhejiang Province,317000 |
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| Abstract: | A revised plane wave expansion method for quickly calculating the band structure of photonic crystals of pixel type is used to design a photonic crystal of square lattice with a large absolute band gap at high frequency. The optimal GaAs photonic crystal structure has a large absolute band gap of Δ ω=0.0995ω e (where ω e=2π c/a, a is the lattice constant, c is light velocity) with a mid gap frequency of 1.2625ω e. |
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| Keywords: | photonic crystal pixel modified plane wave expansion method GaAs absolute band gap |
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