Frequency dependence of dark conductivity in glow-discharged a-Si:H

Frequency dependence of the dark conductivity at room temperature has been measured on glow-discharged amorphous hydrogenated silicon films deposited at various substrate temperatures. In high substrate temperature samples, a frequency-independent conductivity region appears at low frequencies. It is discussed that the observed results are possible to be understood in terms of the paramicrocrystalline formation in the films deposited at high substrate temperatures.