Stress-induced splitting of the conduction bands of GaAs and GaSb

The splitting induced by a 110] strain in the conduction bands of GaAs and GaSb can be obtained from the measured spin relaxation of photoexcited carriers. These experimental results are shown to be in satisfactory agreement with predictions based on $\text{k}$.$\text{p}$ perturbation theory, which use recently calculated values of the coupling between the Г₁ and the two nearest Г₁₅·bands induced by the strain.