Structure and d.c. conductivity of amorphous Si1?xSnx alloys

Amorphous Si_1?xSn_x alloys have been prepared by vapor deposition at a pressure of about 10^?8 Torr on substrates maintained at 77 K. Density measurements and electron diffraction show that Sn atoms are substituted for Si in a random continuous network. The d.c. resistivity of samples of stabilized structure is correctly described by the variable range hopping formula. Structural changes are revealed by the variation of the resistivity at 77 K of samples annealed from 77 K to the crystallization temperature.