Exchange energy for conduction electrons in (ZnMn)Se derived from spin-flip Raman scattering and magnetization |
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Authors: | D Heiman Y Shapira S Foner |
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Institution: | Francis Bitter National Magnet Laboratory Massachusetts Institute of Technology Cambridge, Massachusetts 02139, USA |
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Abstract: | Spin-flip Raman scattering, magnetization, and susceptibility data for Zn0.97Mn0.03Se are reported. The exchange energy Noα = 243 ± 10 meV for the conduction electrons is obtained from an analysis of the Raman and magnetization data. At large magnetic fields (H > 60 kOe), the spin-flip energy ΔE saturates at 14 meV. At low fields ΔE does not extrapolate to zero as H → 0, which is characteristic of scattering from donor-bound electrons. The low temperature magnetization curves are fit to a modified Brillouin function. The fit gives as the fraction of active magnetic ions, and an effective temperature Teff = T + To with To = 1.1 K. The magnetic susceptibility follows a Curie-Weiss law between T = 150 and 280 K with a Curie-Weiss temperature θ = ?33 K. |
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