Structural investigations of the Yb Si(111) - 2x1, 5x1 and 3x1 overlayers |
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Authors: | J. Kofoed I. Chorkendorff J. Onsgaard |
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Affiliation: | Fysisk Institut, Odense University, Campusvej 55, DK-5230 Odense M, Denmark |
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Abstract: | The YbSi interface has been investigated in the sub-monolayer regime employing Ion Scattering Spectroscopy (ISS), Auger Electron Spectroscopy (AES) and Low Energy Electron Diffraction (LEED). Three different structures, YbSi(111) 2x1, YbSi(111) 5x1, and YbSi(111) 3x1, have been established by heat treatments of the interfaces. The structures consist of a stable overlayer of Yb atoms on the Si(111) surfaces. The distance of the Yb atoms to the uppermost layer of Si atoms has been estimated by comparing the YbSi ISS intensity ratio with the predictions of a model based on classical scattering theory and a Thomas-Fermi-Moliére potential. The height of the Yb atoms relative to the substrate toplayer was found to be 1.9 ± 0.3→. |
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