Photoluminescence lifetimes of the In,Tl and Bi bound excitons in silicon

We report measurements of the photoluminescence decay times of bound excitons associated with the donor Bi and the acceptors In and Tl in silicon. These are the first reported results for Tl and Bi, respectively the deepest simple acceptor and donor in silicon. The Tl bound exciton lifetime is found to be in good agreement with a value extrapolated from the results for shallower acceptors. The Bi bound exciton, on the other hand, has a much shorter lifetine than an extrapolation from the shallower donor results would predict.