Effect of pressure on the electrical resistivity of bulk Ge20Te80 glass |
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Authors: | G. Parthasarathy A.K. Bandyopadhyay S. Asokan E.S.R. Gopal |
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Affiliation: | Department of Physics, Indian Institute of Science, Bangalore 560 012, INDIA |
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Abstract: | An irreversible pressure induced semiconductor-to-metal transition in bulk Ge20Te80 glass is observed at about 5 GPa pressure. The high pressure phase has a face centered cubic structure with a lattice constant 6.42 A° as deduced by X-ray diffraction studies on the pressure quenched samples. The temperature and pressure dependence of the electrical resistivity confirms the observed transition to be a semiconductor-to-metal transition. The temperature dependence of thermo electric power is also reported. |
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