Polarization memory of luminescence from photo-generated carriers in aSixC1−x:H (x∼0.2)期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

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Polarization memory of luminescence from photo-generated carriers in aSi_xC_1−x:H (x∼0.2)

Authors:	Yasuaki Masumoto Haruo Kunitomo Shigeo Shionoya Hiro Munekata Hiroshi Kukimoto

Institution:	1. The Institute for Solid State Physics, The University of Tokyo, Roppongi 7-22-1, Minato-ku, Tokyo 106, Japan;1. Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Nagatsuda-cho 4259, Midori-ku, Yokohama 227, Japan

Abstract:	Photoluminescence of aSi_xC_1?x:H (x～0.2) is studied with a particular interest on the localization of carriers. Taking the polarization memory of luminescence as a probe, we clarify the localized character of photo-generated carriers as functions of excitation photon energy, emitted photon energy, temperature and time. The picosecond time-resolved measurement of the polarization memory is shown useful to study dynamical relaxation processes of carriers in disordered systems.

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