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Raman spectroscopic study of femtosecond laser-induced phase transformation associated with ripple formation on single-crystal SiC |
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| Authors: | Makoto Yamaguchi Shigeru Ueno Ryota Kumai Keita Kinoshita Toshiaki Murai Takuro Tomita Shigeki Matsuo Shuichi Hashimoto |
| Institution: | 1. Precision Measurement Section, Measurement and Testing Department, Technical Research Institute, Japan Society for the Promotion of Machine Industry, 1-1-12, Hachiman-cho, Higashikurume-city, Tokyo, 203-0042, Japan 2. The Department of Ecosystem Engineering, The University of Tokushima, Tokushima, 770-8506, Japan |
| Abstract: | Raman spectroscopy was performed to investigate microscopic structural changes associated with a ripple structure formation initiated by femtosecond laser irradiation on the surface of single-crystal silicon carbide. The amorphous phases of silicon carbide, silicon, and carbon were observed. The intensity ratio between amorphous silicon carbide and silicon changed discretely at the boundary between fine and coarse ripples. The physical processes responsible for the formation of the ripple structure are discussed. |
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